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10 Inch N2 Nitrogen UV Debonding Machine, Semiconductor Wafer UV Tape Degumming Equipment With Touch Screen & Alarm Function

10 Inch N2 Nitrogen UV Debonding Machine, Semiconductor Wafer UV Tape Degumming Equipment With Touch Screen & Alarm Function

365nm UV LED Nitrogen Debonding Equipment,For 10 Inch Frame Nitrogen UV Debonding Machine Multi-Size Wafer UV Tape Curing Machine.N2 Filled UV Debonder Machine, Industrial Wafer UV Film Removing Oven For Semiconductor Dicing Process.
  • model no. :

    DSX26-050
  • Brand:

    DSXUV
  • port of dispatch :

    SHENZHEN
  • Payment :

    TT 100%
  • original region :

    SHENZHEN
  • Lead Time :

    15DAYS
Product Details

10 Inch Wafer Frame with N2 Nitrogen UV Debonding Machine, Semiconductor Wafer UV Tape Degumming Equipment With Touch Screen & Alarm Function.


Product Parameters


Model

DSXUV-N2-8

Manufacturer

Dongguan Jude Weiye Electronic Technology Co., Ltd.

Size

L516*W510*H450mm

Compatible Size

Compatible with 10-inch iron rings

Drawer Height

30mm

Curing area

Φ250mm

Wavelenth

UVLED365nm

Power

1000W

UV intensity

400mW/cm2

Input

100-240V AC 50-60HZ

Material

White sheet metal /55kg

Cooling

Air

Irradiation direction

From bottom to top

Display/Language

Touch screen/EN CN...

1.Configuration & requirement

 

No.

Item

Specification

Response

Configuration

1.1

Wafer size

6,8inch compatible

comply

1.2

Wafer tiickness

frame wafer 50um-500um

comply

1.3

Frame Size

8inchcompatible 6inch

comply

1.4

Device type

SEMI AOTO

comply

1.5

Curing material

UV tape

comply

1.6

Lamp type

UV LED

comply

1.7

Device protection

Power Off Procedure Saved

comply

1.8

Operation protection

Fully enclosed design for radiation isolation

comply

1.9

Gas supply

N2 gas for auxiliary gel dissolution; φ8 air tube

comply

1.10

ESDsystem

Ionized wind rod or ionized fan

Not comply

1.11

Device monitoring

The device program continuously records the irradiation time.

comply

1.12

LED LIFE

20000h

comply

1.13

Uv intensity

30-350mw/cm²

comply

1.14

Light Uniformity

10%

comply

1.15

energy uniformity

97%

comply

1.16

Light intensity attenuation rate

10%(≤10000H

comply

1.17

Energy Accuracy

The deviation between actual irradiation energy and the set value is ≤ ±3%.

comply

1.18

range of exposures,range of irradiation

360mmX360mm

comply

1.19

irradiation time

Touchscreen settings are modificable

comply

1.20

UV film thickness

50um-300um UV tape

comply

1.21

Resolving Gel Appearance

解胶后无残胶

comply

1.22

WPH

60pcs/H

comply

1.23

UVIrradiation Function

Supports adjustable exposure times for different UV films

comply

 

2.1All process Specifications should be based on 6 inch Si &SiC wafer

 

Tool must be able to handle substrate with the following specificationsgood Si & SIC 6inch wafer handling and process performance.

6inch silicon carbide wafer substrate specifications 6 inch

SiC wafer Size

6(φ150.0mm)

 Diameter

150.0mm ±0.25

 Primary flat length

47.5 mm±2.5 mm

Secondary flat length

Not applicable

 Primary flat orientation

<11-20> ±5°

 Secondary flat orientation

Not applicable

 Thickness range

50~500μm

Wafer Transmittance

90%

 TTV Total Thickness

Variation

60um

site 10mm×10mmLTV

6 um

 Bow

85um

Warp

300um

 


Reliability Performance Specification

Response

Wafer Handling

Errors < 0.01% (1 in 10,000) of wafers inspected

Damage < 0.01% (1 in 10,000) of wafers inspected

comply

Uptime

≥ 95%

comply

MTBF

1000 hours 

comply

MTBA

500 hours 

comply

MTTR

≤ 4 hours 

comply

 


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